基于GaN的大功率高线性固态发射机研制

介绍了一种GaN大功率高线性固态发射机。利用GaN HEMT的高功率特性,结合新型波导魔T低损耗功率合成的特点,在7.9~8.4GHz范围内实现了连续波饱和输出功率大于200W,效率大于20%。此外,应用新型模拟预失真方法提升功放的线性化指标,在额定输出功率下三阶交调指标(IMD3)优于-30dBc,改善功放的线性度11dB。该发射机具有输出功率大,线性度好等优点,整体性能优于国外同类产品。

Development of GaN SSPA Transmitter with High Power and High Linearity

A GaN SSPA transmitter with high power and high linearity is presented. Using high power GaN HEMT devices and the new Magic-T high efficiency power combiner, the SSPA de-livers more than 200 W saturated output power with power efficiency above 20% in the frequency range of 7. 9~8. 4GHz. Additionally, a new analog pre-distortion method is applied to improve linearity, achieves IMD3 of -30dBc with rated output power, which improves the linearity by 11dB. The advantages in high power and high linearity make the specification of the transmitter better than the similar abroad products.