| Effects of the p-AlInGaN/GaN superlattices’structure on the performance of blue LEDs |
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| 引用本文： | 刘娜,伊晓燕,梁萌,郭恩卿,冯向旭,司朝,姬小利,魏学成,路红喜,刘志强,张宁,王军喜,李晋闽.Effects of the p-AlInGaN/GaN superlattices’structure on the performance of blue LEDs[J].半导体学报,2014,35(2):024010-4. |
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| 作者姓名： | 刘娜 伊晓燕 梁萌 郭恩卿 冯向旭 司朝 姬小利 魏学成 路红喜 刘志强 张宁 王军喜 李晋闽 |
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| 基金项目： | Project supported by the National High Technology Program of China (Nos. 2011AA03A105, 2013AA03A101). |
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| 摘 要： | The advantages of the p-AIInGaN/GaN superlattices＇ （SLs） structure as an electron blocking layer （EBL） for InGaN blue light-emitting diodes （LEDs） were studied by experiment and APSYS simulation. Elec- troluminescence （EL） measurement results show that the LEDs with the p-AllnGaN/GaN SLs＇ structure EBL ex- hibited better optical performance compared with the conventional A1GaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons＇ overflow between multiple quantum-wells （MQWs） and EBL.
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| 关 键 词： | 蓝光LED 超晶格 性能影响 结构 蓝光发光二极管 空穴浓度 多量子阱 InGaN |
Effects of the p-AlInGaN/GaN superlattices＇ structure on the performance of blue LEDs |
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| Liu N,Yi Xiaoyan,Liang Meng,Guo Enqing,Feng Xiangxu,Si Zhao,Ji Xiaoli,Wei Xuecheng,Lu Hongxi,Liu Zhiqiang,Zhang Ning,Wang Junxi and Li Jinmin.Effects of the p-AlInGaN/GaN superlattices＇ structure on the performance of blue LEDs[J].Chinese Journal of Semiconductors,2014,35(2):024010-4. |
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| Authors: | Liu N Yi Xiaoyan Liang Meng Guo Enqing Feng Xiangxu Si Zhao Ji Xiaoli Wei Xuecheng Lu Hongxi Liu Zhiqiang Zhang Ning Wang Junxi and Li Jinmin |
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| Affiliation: | Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China;Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | The advantages of the p-AlInGaN/GaN superlattices' (SLs) structure as an electron blocking layer (EBL) for InGaN blue light-emitting diodes (LEDs) were studied by experiment and APSYS simulation. Electroluminescence (EL) measurement results show that the LEDs with the p-AlInGaN/GaN SLs' structure EBL exhibited better optical performance compared with the conventional AlGaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons' overflow between multiple quantum-wells(MQWs) and EBL. |
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| Keywords: | EBL p-AlInGaN/GaN SLs multiple quantum-wells |
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