The variation of impurity ionization with doping in heavily doped germanium |
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| Authors: | D.K. Roy P.J. George |
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| Affiliation: | Department of Physics, Indian Institute of Technology, Delhi, New Delhi 110029, India |
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| Abstract: | Complete ionization of impurity atoms in semiconductors which is the most common engineering assumption is found to breakdown in the heavily doped condition [1]. Here a calculation of the degree of ionization in degenerate germanium for different doping concentrations is presented. |
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