Electrically active defects in shallow pre-amorphisedp
+
n junctions in silicon |
| |
Authors: | S D Brotherton J R Ayres J B Clegg J P Gowers |
| |
Affiliation: | (1) Philips Research Laboratories, RH1 5HA Redhill, Surrey, UK |
| |
Abstract: | An examination of shallow pre-amorphisedp
+
n junctions in silicon has revealed three distinct defect related phenomena determined largely by the annealing temperature
and relative location of the junction and the amorphous-crystalline (α-c) boundary. For temperatures below 800‡ C all samples
displayed leakage currents of ∼10−3 A/cm2 irrespective of the amorphising atom (Si+, Ge+ or Sn+). The generation centres responsible were identified to be near mid-gap deep level donors lying beyond the α-c interface.
For samples annealed above 800‡ C, the leakage current was determined by the interstitial dislocation loops at the α-c boundary.
If these were deeper than the junction, a leakage current density of ∼10−5 A/cm2 resulted. From the growth of these loops during furnace annealing it was concluded that the growth was supported by the influx
of recoil implanted silicon interstitials initially positioned beyond the α-c boundary. In the case where the as-implanted
junction was deeper than the α-c boundary, annealing above 800° C resulted in a transient enhancement in the boron diffusion
coefficient. As with the dislocation loop growth, this was attributed to the presence of the recoil implanted silicon interstitials. |
| |
Keywords: | Si defects interstitials |
本文献已被 SpringerLink 等数据库收录! |
|