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Intramolecular Locked Dithioalkylbithiophene‐Based Semiconductors for High‐Performance Organic Field‐Effect Transistors
Authors:Sureshraju Vegiraju  Bo‐Chin Chang  Pragya Priyanka  Deng‐Yi Huang  Kuan‐Yi Wu  Long‐Huan Li  Wei‐Chieh Chang  Yi‐Yo Lai  Shao‐Huan Hong  Bo‐Chun Yu  Chien‐Lung Wang  Wen‐Jung Chang  Cheng‐Liang Liu  Ming‐Chou Chen  Antonio Facchetti
Affiliation:1. Department of Chemistry, National Central University, Taoyuan, Taiwan;2. Department of Chemical and Materials Engineering, National Central University, Taoyuan, Taiwan;3. Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan;4. Department of Chemistry and the Materials Research Center, Northwestern University, Evanston, IL, USA
Abstract:New 3,3′‐dithioalkyl‐2,2′‐bithiophene ( SBT )‐based small molecular and polymeric semiconductors are synthesized by end‐capping or copolymerization with dithienothiophen‐2‐yl units. Single‐crystal, molecular orbital computations, and optical/electrochemical data indicate that the SBT core is completely planar, likely via S(alkyl)?S(thiophene) intramolecular locks. Therefore, compared to semiconductors based on the conventional 3,3′‐dialkyl‐2,2′‐bithiophene, the resulting SBT systems are planar (torsional angle <1°) and highly π‐conjugated. Charge transport is investigated for solution‐sheared films in field‐effect transistors demonstrating that SBT can enable good semiconducting materials with hole mobilities ranging from ≈0.03 to 1.7 cm2 V?1 s?1. Transport difference within this family is rationalized by film morphology, as accessed by grazing incidence X‐ray diffraction experiments.
Keywords:dithienothiophene  dithioalkylbithiophene  organic field‐effect transistors  solution‐shearing
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