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Si bipolar chip set for 10-Gb/s optical receiver
Authors:Suzaki   T. Soda   M. Morikawa   T. Tezuka   H. Ogawa   C. Fujita   S. Takemura   H. Tashiro   T.
Affiliation:Opto-Electron. Res. Lab., Kanagawa;
Abstract:
Three Si bipolar ICs, a preamplifier, a gain-controllable amplifier, and a decision circuit, have been developed for 10-Gb/s optical receivers. A dual-feedback configuration with a phase adjustment capacitor makes it possible to increase the preamplifier bandwidth up to 11.2 GHz, while still retaining flat frequency response. The gain-controllable amplifier, which utilizes a current-dividing amplifier stage, has an 11.4-GHz bandwidth with 20-dB gain variation. A master-slave D-type flip-flop is also operated as the decision circuit at 10 Gb/s. On-chip coplanar lines were applied to minimize the electrical reflection between the ICs
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