High-power vertical cavity surface emitting laser with good performances |
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| Authors: | Yan C. Ning Y. Qin L. Liu Y. Zhao L. Wang Q. Jin Z. Sun Y. Tao G. Chu G. Wang C. Wang L. Jiang H. |
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| Affiliation: | Lab. of Excited State Processes, Chinese Acad. of Sci., Changchun, China; |
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| Abstract: | Fabrication and performance of a high-power bottom-emitting InGaAs/GaAsP vertical cavity surface emitting laser with 430 /spl mu/m diameter are described. The device realises the maximum room temperature CW output power 1.52 W at 987.6 nm with FWHM 0.8 nm. The far-field divergence angle is below 20/spl deg/. Reliability test shows at 70/spl deg/C an output power 0.35 W over 500 h. |
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