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| Electrical properties of Ge metal–oxide–semiconductor capacitors with high-k La2O3 gate dielectric incorporated by N or/and Ti | |
| 作者姓名： | 徐火希 徐静平 |
| 基金项目： | Project supported by the National Natural Science Foundation of China;the Natural Science Foundation of Hubei Province;and the Scientific Research Program of Huanggang Normal University |
| 摘 要： | |
| 关 键 词： | Ge MOS capacitor La2O3 N or/and Ti incorporation interface properties k value |
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