Polarity control of GaN epilayers grown on ZnO templates |
| |
| Authors: | Takuma Suzuki Hang-Ju Ko Agus Setiawan Jung-Jin Kim Koh Saitoh Masami Terauchi Takafumi Yao |
| |
| Affiliation: | a Center for Interdisciplinary Research of Advanced Materials, Tohoku University, Aramaki, 2-1-1 Katahira, Aoba-ku, Sendai 980-8578, Japan;b Institute for Multidisciplinary Research of Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan |
| |
| Abstract: | We report the successful growth of Ga-polar GaN epilayers on O-polar ZnO templates pre-deposited on c-sapphire. Prior to GaN growth, NH3 is exposed onto the ZnO template. The polarity of the GaN layers is confirmed by etching of the surface and by conversion beam electron diffraction (CBED), while the O-polar ZnO is confirmed by CBED. It is suggested that the NH3 pre-exposure helps form a Zn3N2 layer, which possesses inversion symmetry and inverts the crystal from anion polar to cation polar. |
| |
| Keywords: | Author Keywords: ZnO GaN Hetero interface Polarity Molecular beam epitaxy CBED |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
