| 氨化温度对氨化Si基Ga2O3/Cr膜制备GaN纳米结构的影响 |
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| 引用本文： | 王邹平,薛成山,庄惠照,王英,张冬冬,黄英龙,郭永福.氨化温度对氨化Si基Ga2O3/Cr膜制备GaN纳米结构的影响[J].功能材料,2009,40(4). |
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| 作者姓名： | 王邹平 薛成山 庄惠照 王英 张冬冬 黄英龙 郭永福 |
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| 作者单位： | 山东师范大学半导体研究所,山东济南,250014 |
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| 基金项目： | 国家重大自然科学基金资助项目(90201025,90301002) |
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| 摘 要： | 采用磁控溅射的方法在Si(111)衬底上溅射沉积Ga2O3/Cr膜,并通过氨化的方法在Si(111)衬底上成功合成了六方纤锌矿GaN纳米结构材料,研究了不同的氨化温度对合成GaN纳米材料的影响.采用扫描电子显微镜(SEM)、X射线衍射仪(XRD)、透射电子显微镜(TEM)、高分辨透射电子显微镜(HR-TEM)、傅里叶红外吸收(FTIR)光谱来检测样品的形态,结构和成分,并且讨论了GaN纳米结构的生长机理.研究结果表明,在Cr催化合成GaN纳米结构的过程中,氨化温度对其有重要影响,最佳温度是950℃.
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| 关 键 词： | Ga2O3/Cr膜 GaN纳米线 氨化温度 磁控溅射 |
Effect of ammoniating temperature of Ga_2O_3/Cr films on fabrication of GaN nanostructure on Si substrates |
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| WANG Zou-ping
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XUE Cheng-shan
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ZHUANG Hui-zhao
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WANG Ying
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ZHANG Dong-dong
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HUANG Ying-long
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GUO Yong-fu.Effect of ammoniating temperature of Ga_2O_3/Cr films on fabrication of GaN nanostructure on Si substrates[J].Journal of Functional Materials,2009,40(4). |
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| Authors: | WANG Zou-ping XUE Cheng-shan ZHUANG Hui-zhao WANG Ying ZHANG Dong-dong HUANG Ying-long GUO Yong-fu |
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| Affiliation: | Institute of Semiconductors;Shandong Normal University;Ji'nan 250014;China |
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| Abstract: | Hexagonal wurtzite GaN materials with nanostructure have been fabricated on Si(111) substrates via ammoniating Ga2O3/Cr films at different temperatures.Cr layers and Ga2O3 films were deposited in turn on Si(111) substrates by radio frequency(r.f.) magnetron sputtering before the ammoniating process.Scanning electron microscopy,X-ray diffraction,transmission electron microscopy,high-resolution transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the morphol... |
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| Keywords: | Ga2O3/Cr films GaN nanowires ammoniating magnetron sputtering |
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