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A Monolithic Single-Ended X-Band Mixer Circuit |
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| Abstract: | A monolithic single-ended X-band mixer circuit has been fabricated on a high-resistivity silicon substrate, employing selective epitaxial deposition. The final resistivities of the N-type substrates are between 5000 and 17000 ohm-cm. The mixer diode is a molybdenum-silicon Schottky barrier diode. The overall single-sideband noise figure for the circuit obtained at 9 GHz was 10.5 dB. |
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