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Supersonic jet epitaxy of silicon carbide on silicon using methylsilane |
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| Authors: | S.A. Ustin C. Long W. Ho |
| Affiliation: | Laboratory of Atomic and Solid State Physics and Materials Science Center, Cornell University, Ithaca, NY 14853, USA |
| Abstract: | Cubic SiC thin films have been epitaxially grown on silicon substrates using the single source precursor methylsilane (H3Si–CH3). Single phase films were grown by supersonic jet epitaxy (SJE) at temperatures as low as 560°C on Si(111) and 600°C on Si(001). Growth rates and crystal quality were found to be strongly dependent on substrate temperature and methylsilane kinetic energy. Films were characterized by X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). |
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