| Al_2O_3过渡层厚度对AZO薄膜性能的影响研究 |
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| 引用本文： | 江丰,沈鸿烈,鲁林峰,杨超,罗军.Al_2O_3过渡层厚度对AZO薄膜性能的影响研究[J].电子元件与材料,2010,29(12). |
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| 作者姓名： | 江丰 沈鸿烈 鲁林峰 杨超 罗军 |
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| 作者单位： | 南京航空航天大学,材料科学与技术学院,江苏,南京,210016 |
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| 基金项目： | 国家“863”计划资助项目(No.2006AA03Z219) |
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| 摘 要： | 采用磁控溅射法,在预先沉积了Al2O3过渡层的玻璃衬底上制备了性能优良的AZO薄膜。借助XRD、AFM、四探针仪和分光光度计对AZO薄膜的结构、表面形貌以及电学和光学性质进行了表征,并研究了Al2O3过渡层厚度对AZO薄膜性能的影响。结果表明:Al2O3过渡层的添加对AZO薄膜的表面形貌有一定影响;AZO薄膜的结晶质量随着过渡层厚度的增加先上升后下降;AZO薄膜的电阻率因过渡层的添加而明显降低,特别是在AZO薄膜较薄时;在添加了1～3 nm厚的过渡层后,160 nm厚的AZO薄膜的电阻率下降了44%左右;AZO薄膜的可见光透射率和光学带隙基本不受过渡层影响。
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| 关 键 词： | AZO Al2O3过渡层 磁控溅射 电阻率 透射率 |
Effects of thickness of Al_2O_3 buffer layer on the properties of AZO thin films |
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| JIANG Feng,SHEN Honglie,LU Linfeng,YANG Chao,LUO Jun.Effects of thickness of Al_2O_3 buffer layer on the properties of AZO thin films[J].Electronic Components & Materials,2010,29(12). |
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| Authors: | JIANG Feng SHEN Honglie LU Linfeng YANG Chao LUO Jun |
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| Affiliation: | JIANG Feng,SHEN Honglie,LU Linfeng,YANG Chao,LUO Jun(College of Materials Science & Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China) |
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| Abstract: | High performance AZO thin films were deposited by magnetron sputtering on the glass substrate pre-deposited with Al2O3 buffer layer.The structure,surface morphology,electrical and optical properties of the AZO films were studied by X-ray diffractometer(XRD),atomic force microscopy(AFM),four-point probe tester and UV-vis spectrometer,and the effects of thickness of Al2O3 buffer layer on the properties of AZO films were investigated.The results show that: Application of Al2O3 buffer layer changes the surface ... |
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| Keywords: | AZO Al2O3 buffer layer magnetron sputtering resistivity transmittance |
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