Abnormal junction profile of silicided p+/n shallowjunctions: a leakage mechanism |
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| Authors: | Chel-Jong Choi Tae-Yeon Seong Key-Min Lee Joo-Hyoung Lee Young-Jin Park Hi-Deok Lee |
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| Affiliation: | Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol.; |
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| Abstract: | The leakage mechanism in p+/n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions |
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