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| 金刚石薄膜的反应离子刻蚀 | |
| 引用本文： | 姚翔,沈荷生,丁桂甫,朱军,张志明,张寿柏. 金刚石薄膜的反应离子刻蚀[J]. 微细加工技术, 2000, 0(3): 23-28 |
| 作者姓名： | 姚翔 沈荷生 丁桂甫 朱军 张志明 张寿柏 |
| 作者单位： | 国家教育部薄膜与微细加工技术重点实验室上海交通大学微纳米技术研究院上海 200030 |
| 基金项目： | 国家自然科学基金资助项目(59985007) |
| 摘 要： | 反应离子刻蚀是金刚石薄膜图形化的一种有效方法。研究了用Ｏ２及与Ａｒ的混合气体进行金刚石薄膜图形化刻蚀的主要工艺参数（射频功能、工作气压、气体流量、反应气体成分与比例等）对刻蚀速率和刻蚀界面形貌的影响，兼顾刻蚀速率和刻蚀平滑程度等关键因素，建立了金刚石薄膜刻蚀的优化工艺参数，达到了较满意的图形效果。 |
| 关 键 词： | 反应离子刻蚀 金刚石薄膜 刻蚀速率 |
| 文章编号： | 1003-8213(2000)03-0023-06 |
| 修稿时间： | 1999-11-17 |
Reactive Ion Etching of Diamond Films |
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| YAO Xiang,SHEN HE?Sheng,DING Gui?fu,ZHU Jun,ZHANG Zhi?ming,ZHANG Shou?bai. Reactive Ion Etching of Diamond Films[J]. Microfabrication Technology, 2000, 0(3): 23-28 | |
| Authors: | YAO Xiang SHEN HE?Sheng DING Gui?fu ZHU Jun ZHANG Zhi?ming ZHANG Shou?bai |
| Abstract: | Reactive Ion Etching is an effective technique for etching diamond films.Reactive Ion Etching of Diamond Film using O 2 or a gas mixture of O 2 and Ar was investigated.Effects of rf power,system pressure,flux and O 2 concentration in the gas mixture on etch rate and surface appearance were studied.Considering the key factors of the etching rate and the flatness of etching side,optimized technologic parameters for the etching of diamond films were achieved and the satisfied patterns were obtained. |
| Keywords: | Reactive Ion Etching diamond films etch rate plasma dc bias |
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