Monolithic integration of GaAs/AlGaAs LED and Si driver circuit |
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| Authors: | Choi HK Mattia JP Turner GW Tsaur B-Y |
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| Affiliation: | MIT Lincoln Lab., Lexington, MA; |
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| Abstract: | A GaAs/AlGaAs LED has been monolithically integrated with a Si driver circuit composed of ten MOSFETs. The LED replaces the output pad of a 2- μm design rule, standard Si output buffer circuit, so that the overall area remains the same. By applying a stream of voltage pulses to the input of the driver circuit, the LED output has been modulated at rates exceeding 100 MHz |
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