InSb 红外焦平面阵列探测器湿法刻蚀

随着大规模InSb 红外焦平面(FPA)器件的发展，探测器制备的传统湿法刻蚀工艺已越来越难以满足新工艺要求。介绍了一种用于制备InSb 红外焦平面探测器的新湿法刻蚀工艺:使用适当比例的柠檬酸/H2O2 系刻蚀剂代替现有乳酸/硝酸系刻蚀剂，同时采用N2 气泡搅拌刻蚀装置来辅助刻蚀。通过实验对比分析表明，新刻蚀工艺可以很好地解决原湿法刻蚀横向刻蚀和下切效应，提高了刻蚀均匀性和平整度，减小了表面粗糙度，并明显降低了InSb 器件的漏电流，提高了电性能。

Wet etching of InSb IRFPA detectors

With the development of InSb large-scale Infrared Focal Plane Arrays (IRFPA), wet etching process has not met the new technological requirement of IRFPA. A novel wet etching process was expatiated with suitable ratio citric acid/H2O2 as etchant instead of lactic acid/nitric acid in being and assistant etching facility using N2 agitation. The results from comparison and analysis of the experiment clearly indicate that the surface morphology etched by new process, compared with the conventional process, has less lateral etching and mesa trench, more surface uniformity and lower roughness. Otherwise, the electrical properties is improved with lower leak current.