Charge transport and trapping characteristics in thin nitride-oxidestacked films

A charge transport and trapping model for thin nitride-oxide stacked films between silicon substrates and polysilicon gates is proposed. Nitride-oxide stacked films can be thought of as an oxide film with electron trapping at the nitride/oxide interface. The density of electron trapping is determined by the current-continuity requirement. The electron trapping reduces the leakage current and helps to lower the incidence of early failures for nitride-oxide stacked films