A solution state diode using semiconductor polymer nanorods with nanogap electrodes

A solution state polymer diode, which uses regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT):dichlorobenzene solution as the semiconductor between highly doped p-type silicon and aluminum electrodes has been built. Electrodes separated by a 40 nm gap enable intra-chain charge carrier transfer through the lengths of single polymer chains. This prevents chain to chain hopping and chain entanglements, increasing carrier mobility. The degradation with time and hysteresis effects of the diodes are measured. An optimal P3HT solution concentration of 6 mg ml(-1) is found. A current density of at least 300 mA cm(-2) is achieved, indicating at least a six-fold improvement in carrier mobility compared to previously fabricated solid state P3HT diodes.