| 碲镉汞霍耳测试副效应及其与组分的关系 |
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| 引用本文： | 杨晓阳,林杏潮,李向阳,龚海梅.碲镉汞霍耳测试副效应及其与组分的关系[J].红外与激光工程,2007,36(4):457-460. |
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| 作者姓名： | 杨晓阳 林杏潮 李向阳 龚海梅 |
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| 作者单位： | 中国科学院上海技术物理研究所,上海,200083 |
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| 摘 要： | 为了准确地表述碲镉汞(Hg1-xCdxTe)的电学性能，对碲镉汞(Hg1-xCdxTe)样品进行了霍耳效应测试，讨论了伴随霍耳电压所产生的几种副效应电压的特性及其消除方法，研究了第5种电压在不同组分x碲镉汞样品上的体现。在高阻样品上拟合出第5种电压随测试电流变化曲线。分析了第5种电压和碲镉汞材料晶体质量之间的关系。
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| 关 键 词： | 碲镉汞 霍耳效应 附加电压 第5种电压 |
| 文章编号： | 1007-2276（2007）04-0457-04 |
| 收稿时间： | 2006/6/9 |
| 修稿时间： | 2006-06-09 |
Vice-effects on Hall measurements in Hg1-xCdxTe samples and relations with the composition of Cd |
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| YANG Xiao-yang,LIN Xing-chao,LI Xiang-yang,GONG Hai-mei.Vice-effects on Hall measurements in Hg1-xCdxTe samples and relations with the composition of Cd[J].Infrared and Laser Engineering,2007,36(4):457-460. |
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| Authors: | YANG Xiao-yang LIN Xing-chao LI Xiang-yang GONG Hai-mei |
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| Affiliation: | Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China |
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| Abstract: | To characterize the electrical properties of MCT(Hg1-xCdxTe) accurately，Hall effect mea-surements is conducted on MCT（Hg1-xCdxTe）sample and several vice-effects voltages accompanied with Hall voltage are discussed, also including the method to eliminate them. The representation of the 5th voltage on the MCT sample with different composition is studied. The 5th voltages with different currents are fitted on a high resistance sample. Relations between the 5th voltage and the crystal quality are also analyzed. |
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| Keywords: | MCT Hall effect Vice-effect voltage 5th voltage |
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