| AlGaN/GaN HEMT热形貌分布特性仿真 |
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| 引用本文： | 钟红生,孙玲玲,董林玺. AlGaN/GaN HEMT热形貌分布特性仿真[J]. 杭州电子科技大学学报, 2011, 31(3): 1-4 |
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| 作者姓名： | 钟红生 孙玲玲 董林玺 |
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| 作者单位： | 杭州电子科技大学,电子信息学院,浙江杭州,310018 |
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| 基金项目： | 国家重点实验室开发基金资助项目(KYH043110023) |
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| 摘 要： | 该文从泊松方程、连续性方程和晶格热方程出发,采用商用TCAD软件建立A1GaN/GaNHEMT器件二维模型.针对自加热效应,在不同的直流偏置电压下,对AlGaN/GaN HEMT器件进行了二维数值分析,获得相应的热形貌分布.
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| 关 键 词： | 铝镓氮/氮化镓 高电子迁移率晶体管 自加热效应 热分析 |
Simulation of Thermal Profiles on AlGaN/GaN HEMT |
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| ZHONG Hong-sheng,SUN Ling-ling,DONG Lin-xi. Simulation of Thermal Profiles on AlGaN/GaN HEMT[J]. Journal of Hangzhou Dianzi University, 2011, 31(3): 1-4 |
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| Authors: | ZHONG Hong-sheng SUN Ling-ling DONG Lin-xi |
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| Affiliation: | ZHONG Hong-sheng,SUN Ling-ling,DONG Lin-xi(School of Electronics Information,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China) |
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| Abstract: | Based on the Poisson equation,continuity equation and lattice thermal equation,with the aid of the commercial TCAD software,a two-dimensional numerical model of AlGaN/GaN HEMT is built.The temperature profiles caused by self-heating effect under a wide range of bias condition are presented. |
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| Keywords: | AlGaN/GaN HEMT self-heating effect thermal analysis |
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