| 括非耗尽势垒层的AlGaN/GaN MIS-HFET电荷控制解析模型 |
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| 引用本文： | 卢盛辉,杜江锋,罗谦,于奇,周伟,夏建新,杨漠华.括非耗尽势垒层的AlGaN/GaN MIS-HFET电荷控制解析模型[J].半导体学报,2010,31(9):094004-7. |
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| 作者姓名： | 卢盛辉 杜江锋 罗谦 于奇 周伟 夏建新 杨漠华 |
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| 作者单位： | State;Laboratory;Electronic;Thin;Films;Integrated;Devices;University;Science;Technology;China; |
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| 摘 要： | An analytical charge control model considering the insulator/AlGaN interface charge and undepleted AlGaN barrier layer is presented for AlGaN/GaN metal–insulator–semiconductor heterostructure field effect transistors (MIS-HFETs) over the entire operation range of gate voltage. The whole process of charge control is analyzed in detail and partitioned into four regions: I—full depletion, II—partial depletion, III—neutral region and IV—electron accumulation at the insulator/AlGaN interface. The results show that two-dimensional electron gas (2DEG) saturates at the boundary of region II/III and the gate voltage should not exceed the 2DEG saturation voltage in order to keep the channel in control. In addition, the span of region II accounts for about 50% of the range of gate voltage before 2DEG saturates. The good agreement of the calculated transfer characteristic with the measured data confirms the validity of the proposed model.
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| 关 键 词： | 铝镓氮/氮化镓 金属-绝缘体-半导体异质结场效应晶体管 二维电子气 电荷控制解析模型 |
Analytical charge control model for AlGaN/GaN MIS-HFETs includingan undepleted barrier layer |
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| Lu Shenghui,Du Jiangfeng,Luo Qian,Yu Qi,Zhou Wei,Xia Jianxin and Yang Mohua.Analytical charge control model for AlGaN/GaN MIS-HFETs includingan undepleted barrier layer[J].Chinese Journal of Semiconductors,2010,31(9):094004-7. |
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| Authors: | Lu Shenghui Du Jiangfeng Luo Qian Yu Qi Zhou Wei Xia Jianxin and Yang Mohua |
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| Affiliation: | State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;State key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | |
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| Keywords: | AlGaN/GaN MIS-HFET 2DEG analytical charge control model |
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