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用于UHF RFID标签的低功耗BLF产生电路
引用本文:唐龙飞,庄奕琪,刘伟峰,靳钊.用于UHF RFID标签的低功耗BLF产生电路[J].西安电子科技大学学报,2011,38(5):152-158,164.
作者姓名:唐龙飞  庄奕琪  刘伟峰  靳钊
作者单位:西安电子科技大学宽禁带半导体材料与器件教育部重点实验室;
摘    要:提出了一种反向散射链路频率生成电路,用于符合EPCTM Class1 Generation2协议的无源超高频射频识别(UHF RFID)芯片.该电路在读写器发送Query命令时生成控制信号,使积分器产生参考电压,控制弛张振荡器产生符合协议要求的反向散射链路频率.该电路采用TSMC0.18μm CMOS工艺实现.测试结果表明,在1V工作电压下功耗为0.52μW.采用该电路的UHFRFID芯片可以提高芯片工作距离以及读取速率.

关 键 词:超高频射频识别  反向散射链路频率  低功耗
收稿时间:2010-07-22

Low-power BLF genarator for the UHF RFID tag
TANG Longfei,ZHUANG Yiqi,LIU Weifeng,JIN Zhao.Low-power BLF genarator for the UHF RFID tag[J].Journal of Xidian University,2011,38(5):152-158,164.
Authors:TANG Longfei  ZHUANG Yiqi  LIU Weifeng  JIN Zhao
Affiliation:(Ministry of Education Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi'an  710071, China)
Abstract:A novel backscatter link frequency (BLF) generator for UHF RFID transponders which meet the EPCTM Class1 Generation2 protocol is presented. A control signal is generated when the reader sends the Query command. Then this signal controls an integrator generating a reference voltage which makes a relaxation oscillator output a BLF. This BLF can meet the requirements of the Gen2 protocol. The BLF generator is implemented by the TSMC 0.18μm CMOS process. At the end of this paper, measuremental results show that the circuit power consumption is 0.52μW at the 1V operating voltage. As a result, the tag with the proposed circuit can acquire a longer read range and higher read rates.
Keywords:UHF RFID  backscatter link frequency  low power  
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