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V-shaped micromechanical tunable capacitors for RF applications
Authors:Aurélie Cruau  Gaëlle Lissorgues  Pierre Nicole  Dominique Placko  Adrian M Ionescu
Affiliation:(1) ESIEE, SIGTEL laboratory, Cité Descartes, 93162 Noisy-le-Grand, France;(2) Thales Airborne Systems, OHTA department, Centre Charles Nungesser, 2 avenue Gay Lussac, 78851 Elancourt cedex, France;(3) Ecole Normale Supérieure de Cachan, SATIE laboratory, 61 avenue du Président Wilson, 94235 Cachan cedex, France;(4) EPFL, Electronic laboratory, Ecublens, BM 1-125, 1015 Lausanne, Switzerland
Abstract:A new MEM varactor design is presented. It relies on the displacement of an isolated conductor in the air gap of a V-shaped capacitor. To estimate capacitance and tuning ratio of this structure the distributed point source method (DPSM) has been used for electrostatic simulations. The realisation and characterisation of glass motionless prototypes show the feasibility and the interest of this new concept for RF applications. To obtain actuated mobile devices, a novel silicon process has also been developed.
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