Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing |
| |
Authors: | Sang-Jin Jeon Jong-Woong Chang Kwang-Soo Choi Jyoti Prakash Kar Tae-Il Lee Jae-Min Myoung |
| |
Affiliation: | 1. Samsung Electronics, LCD Research and Development 1Team, Choongnam, Tangjeong 336-840, Republic of Korea;2. Information and Electronic Materials Research Laboratory, Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea |
| |
Abstract: | We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using In–Ga–Zn–O (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high on–off current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|