| A/B位离子掺杂BiFeO3纳米薄膜的微结构与铁电性能 |
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| 引用本文： | 韩亚洁,钱进,王建荣,林秀娟,杨长红,黄世峰.A/B位离子掺杂BiFeO3纳米薄膜的微结构与铁电性能[J].硅酸盐学报,2021(3):511-518. |
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| 作者姓名： | 韩亚洁 钱进 王建荣 林秀娟 杨长红 黄世峰 |
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| 作者单位： | 济南大学;济南大学材料科学与工程学院 |
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| 基金项目： | 国家自然科学基金面上项目(51972144,51632003);国家自然科学基金联合基金项目(U1806221);山东省重点研发计划(2019GGX102015);泰山学者攀登计划;济南市顶尖人才“一事一议”项目;济南市“高校20条”项目(2019GXRC017)。 |
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| 摘 要： | 采用化学溶液法结合层层旋涂退火工艺,在掺氟氧化锡导电玻璃基片上制备了BiFe0.95Mn0.05O3和Bi0.9Nd0.1FeO3纳米晶铁电薄膜,并分析比较了其微结构和铁电性能。结果表明:2组分样品均为单相多晶钙钛矿结构,晶粒细小均匀,表面平整,结构致密。两薄膜均获得了饱和电滞回线,且BiFe0.95Mn0.05O3薄膜具有向上的择优取向极化和更优异的铁电性能,其剩余极化强度(Pr)达60mC·cm–2,在1~50 k Hz频率范围与25~200℃温度区间内铁电极化响应稳定,保持时间长达1′103 s工作与反复极化翻转高达1′109次表现出优异的电荷保持力和抗疲劳稳定性。
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| 关 键 词： | 薄膜 铁酸铋 离子掺杂 微结构 铁电性 |
Structure and Ferroelectric Properties of BiFeO3 Nano-Crystalline Film Substituted at A/B Site |
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| HAN Yajie,QIAN Jin,WANG Jianrong,LIN Xiujuan,YANG Changhong,HUANG Shifeng.Structure and Ferroelectric Properties of BiFeO3 Nano-Crystalline Film Substituted at A/B Site[J].Journal of The Chinese Ceramic Society,2021(3):511-518. |
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| Authors: | HAN Yajie QIAN Jin WANG Jianrong LIN Xiujuan YANG Changhong HUANG Shifeng |
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| Affiliation: | (Shandong Provincial Key Laboratory of Preparation and Measurement of Building Materials,University of Jinan,Jinan 250022,China;School of Materials Science and Engineering,University of Jinan,Jinan 250022,China) |
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| Abstract: | The nano-crystalline ferroelectric films composed of BiFe0.95Mn0.05O3 and Bi0.9Nd0.1FeO3were fabricated on the fluorine-doped tin oxide/glass substrates via the simple and cost-effective chemical solution deposition method combined with spin-coating and the subsequent layer-by-layer annealing technique. Microstructures and ferroelectric properties of the samples were investigated. Results show that either BiFe0.95Mn0.05O3 or Bi0.9Nd0.1FeO3film has a single polycrystalline perovskite phase structure with fine and homogeneous grains and smooth surface in addition to a compact and dense structure. Both film samples exhibited well-saturated polarization-electric field hysteresis loops. Especially, the BiFe0.95Mn0.05O3 film showed more preferential upward polarization orientation and superior ferroelectric properties than the Bi0.9Nd0.1FeO3film, which was reflected by a high remanent polarization(Pr) of 60 mC·cm–2 and stable ferroelectric responses to frequency and temperature in the ranges of 1 to 50 k Hz and 25 to 200 ℃ in addition to retention capability of 1′103 seconds and fatigue endurance over 1′109 cycles. |
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| Keywords: | thin film bismuth ferrite ion doping microstructure ferroelectric property |
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