Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures |
| |
| Authors: | Hyunsoo Kim Sung-Nam Lee Jaehee Cho |
| |
| Affiliation: | 1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea;2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793, Republic of Korea;3. School Department of Physics, Applied Physics and Astronomy, Department of Electrical, Computer, and System Engineering, and Future Chips Constellation, Rensselaer Polytechnic Institute, Troy, NY 12180, USA |
| |
| Abstract: | We investigated the electrical and optical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with top-emission and flip-chip structures. Compared with top-emission LEDs, flip-chip LEDs exhibited a 0.25 V smaller forward voltage and an 8.7 Ω lower diode resistance. The light output power of the flip-chip LED was also larger than that of the top-emission LED by factors of 1.72 and 2.0 when measured before and after packaging, respectively. The improved electrical and optical output performances of flip-chip LEDs were quantitatively analyzed in terms of device resistance and ray optics, respectively. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
