On the relationship between the electronic density of states and the superconducting critical temperature of disordered V3Si |
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Authors: | D. O. Welch C. S. Pande R. Caton R. Viswanathan |
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Affiliation: | 1. Brookhaven National Laboratory, Upton, New York 4. Hughes Aircraft Co., Los Angeles, California
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Abstract: | The available data on the effect of neutron and α-particle irradiation on the superconducting properties and the low-temperature specific heat capacity of single- and polycrystalline V3Si were analyzed in a unified manner. It was found that the electron-phonon renormalization parameter λ does not vary simply proportionally to the bare density of electron states at the Fermi level as had been earlier conjectured by Dynes and Varma, nor does it vary in exactly the same manner as found by Fradin and Williamson to hold for a variety of vanadium-based A15 structure compounds and pseudobinary alloys. When the behavior of V3Si is compared with that of Nb3Sn, Nb3Al, and Nb3Ge, it is seen that the response to disorder of parameters of importance in the superconductivity of these compounds does not follow any simple, universal behavior. |
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