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Amorphous Si1−xCx:H films prepared by hot-wire CVD using SiH3CH3 and SiH4 mixture gas and its application to window layer for silicon thin film solar cells |
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| Authors: | Shunsuke Ogawa Masaaki Okabe Norimitsu Yoshida Shuichi Nonomura |
| Affiliation: | a Gifu University, Environmental and Renewable Energy Systems, 1-1 Yanagido, Gifu 501-1193, Japan b Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, 1-1 Yanagido, 501-1193 Gifu, Japan c Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan |
| Abstract: | B-doped hydrogenated amorphous silicon carbon (a-Si1−xCx:H) films have been prepared by hot-wire CVD (HWCVD) using SiH3CH3 as the carbon source gas. The optical bandgap energy and dark conductivity of the film are about 1.94 eV and 2 × 10− 9 S/cm, respectively. Using this film as a window layer, we have demonstrated the fabrication of solar cells having a structure of the textured SnO2(Asahi-U)/a-Si1−xCx:H(p)/a-Si1−xCx:H(buffer)/a-Si:H(i)/μc-Si:H(n)/Al. The conversion efficiency of the cell is found to be 7.0%. |
| Keywords: | Silicon carbide Titanium dioxide Solar cells Hot-wire CVD |
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