一种基于GaN器件大功率双向DC/DC变换器

本文介绍了一种新的高功率双向隔离式DC/DC变换器。DC/DC转换器使用基于氮化镓(GaN)的功率开关器件。本文对10 kW GaN大功率DC/DC变换器的拓扑结构进行了优化,参数化和分析,并通过仿真和验证了其有效性。它由两个单相全桥电路、两个输入输出电感和一个高频变压器组成。高频变压器在实现两个全桥变换器之间的电流隔离方面起着至关重要的作用。使用MATLAB仿真软件对10 kW的变换器进行了建模。MATLAB仿真结果验证了变换器的性能适合于高功率应用并能实现轻负载条件下的零电压开通(ZVS)和零电流关断(ZCS)。然后,设计了一个7 kW的实验原型,以验证所设计拓扑的有效性。

A High-Power Bidirectional DC/DC Converter Based on GaN Devices

This paper introduces a new high-power bidirectional isolated DC/DC converter. The DC/DC converter uses power switching devices based on gallium nitride(GaN). The topology of 10 kW GaN high-power DC/DC converter is optimized,parameterized and analyzed,and its effectiveness is verified by simulation. It consists of two single-phase full bridge circuits,two input and output inductors and a high frequency transformer. The high-frequency transformer plays a vital role in realizing the galvanic isolation between the two full-bridge converters. The MATLAB simulation software is used to model the 10 kW converter. MATLAB simulation results verify that the performance of the converter is suitable for high power applications and can achieve zero voltage turn-on(ZVS)and zero current turn-off(ZCS)under light load conditions. And a 7 kW experimental prototype designed verify the effectiveness of the designed topology.