| 锗硅低噪声放大器的研究进展 |
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| 引用本文： | 李振国,陈建新,高铭洁.锗硅低噪声放大器的研究进展[J].半导体技术,2005,30(2):47-50,43. |
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| 作者姓名： | 李振国 陈建新 高铭洁 |
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| 作者单位： | 北京工业大学光电子实验室,北京,100022;北京工业大学光电子实验室,北京,100022;北京工业大学光电子实验室,北京,100022 |
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| 摘 要： | 介绍了采用锗硅技术的低噪声放大器的基本理论,给出了一个2GHz低噪声放大器的例子,并总结了近来采用锗硅技术的各种频段的低噪声放大器研究情况.最后,介绍了锗硅技术的广阔应用前景.
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| 关 键 词： | 锗硅双极性异质结晶体管 低噪声放大器 射频集成电路 |
Study of Low-noise Amplifiers Using SiGe Bipolar Technology |
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| Li Zhen-guo,CHEN Jian-xin,GAO Ming-jie.Study of Low-noise Amplifiers Using SiGe Bipolar Technology[J].Semiconductor Technology,2005,30(2):47-50,43. |
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| Authors: | Li Zhen-guo CHEN Jian-xin GAO Ming-jie |
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| Abstract: | The theory of LNAs using SiGe bipolar technology is presented. And a 2GHz LNA based SiGe technology is presented in this article and state-of-the-art in SiGe based devices in different areas are described. Finally, the application of SiGe-based device was summarized. |
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| Keywords: | SiGe HBT low-noise amplifiers RF IC |
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