Electrical properties of N2O/NH3 plasma grownoxynitride on strained-Si |
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| Authors: | Bera L.K. Ray S.K. Mukhopadhyay M. Nayak D.K. Usami N. Shiraki Y. Maiti C.K. |
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| Affiliation: | Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur; |
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| Abstract: | Growth of ultrathin (<100 Å) oxynitride on strained-Si using microwave N2O and NH3 plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO2 interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1×1010 cm-2) has been obtained for NH3 plasma treated N2O oxide sample. Nitrided oxide shows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress |
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