A high-performance δ-dopedGaAs/InxGa1-xAs pseudomorphic high electronmobility transistor utilizing a graded InxGa1-xAschannel |
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| Authors: | Hir-Ming Shieh Wei-Chou Hsu Rong-Tay Hsu Chang-Luen Wu Tien-Shou Wu |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan; |
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| Abstract: | ![]()
A δ-doped GaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (HEMT) utilizing a graded In composition InGaAs channel grown by low-pressure metalorganic chemical vapor deposition was demonstrated. This structure had an extrinsic transconductance as high as 175 (245) mS/mm and a saturation current density a high as 500 (690) mA/mm at 300 (77) K for a gate length of 2 μm. The maximum transconductance versus gate bias extended over a broad and flat region of more than 2 V at 300 K. A low gate leakage current (<10 μA at -7 V) at 300 K was obtained |
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