| 二甲基二氯化锡前驱体CVD制备SnO2∶F薄膜及其性能研究 |
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| 引用本文： | 陈峰,张振华,赵会峰,鲍思权,姜宏.二甲基二氯化锡前驱体CVD制备SnO2∶F薄膜及其性能研究[J].材料导报,2016,30(24):6-10, 15. |
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| 作者姓名： | 陈峰 张振华 赵会峰 鲍思权 姜宏 |
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| 作者单位： | 1. 海南大学，海南省特种玻璃重点实验室，海口 570228;2. 海南中航特玻材料有限公司，特种玻璃国家重点实验室，澄迈 571924; 海南中航特玻科技有限公司，澄迈 571924;3. 海南大学，海南省特种玻璃重点实验室，海口 570228; 海南中航特玻材料有限公司，特种玻璃国家重点实验室，澄迈 571924; 海南中航特玻科技有限公司，澄迈 571924 |
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| 基金项目： | 国家科技支撑计划课题项目(2013BAJ15B04);海南省重大科技项目(ZDZX2013002-2) |
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| 摘 要： | 采用二甲基二氯化锡(DMTC)为新前驱体,通过常压CVD法在硼硅玻璃基板上制备SnO_2∶F透明导电薄膜,研究了DMTC、TFA和H_2O的含量对薄膜结构及光电性能的影响,研究表明当F/Sn物质的量比为1∶1、H2O/Sn物质的量比为3∶2时,制备出可见光透过率84.17%、方块电阻9.2Ω/□且结晶性能良好的多晶SnO_2薄膜。通过与单丁基三氯化锡(MBTC)为前驱体所制备薄膜的性能进行比较,结果表明,两种前驱体所制备薄膜均具有四方金红石结构,利用DMTC不仅可以制备出与MBTC性能相近的薄膜,同时薄膜表面更加均匀。
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| 关 键 词： | 二甲基二氯化锡 化学气相沉积法 SnO2∶F薄膜 |
Performance of F-doped SnO2 Thin Film Prepared from Dimethyltin Dichloride Precursor by Chemical Vapor Deposition |
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| CHEN Feng,ZHANG Zhenhu,ZHAO Huifeng,BAO Siquan and JIANG Hong.Performance of F-doped SnO2 Thin Film Prepared from Dimethyltin Dichloride Precursor by Chemical Vapor Deposition[J].Materials Review,2016,30(24):6-10, 15. |
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| Authors: | CHEN Feng ZHANG Zhenhu ZHAO Huifeng BAO Siquan and JIANG Hong |
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| Affiliation: | Key Laboratory of Special Glass in Hainan Province, Hainan University, Haikou 570228,State Key Laboratory of Special Glass, Hainan AVIC Special Glass Materials Co., Ltd., Chengmai 571924;AVIC Hainan Special Glass Technology Co., Ltd., Chengmai 571924,State Key Laboratory of Special Glass, Hainan AVIC Special Glass Materials Co., Ltd., Chengmai 571924;AVIC Hainan Special Glass Technology Co., Ltd., Chengmai 571924,Key Laboratory of Special Glass in Hainan Province, Hainan University, Haikou 570228 and Key Laboratory of Special Glass in Hainan Province, Hainan University, Haikou 570228;State Key Laboratory of Special Glass, Hainan AVIC Special Glass Materials Co., Ltd., Chengmai 571924;AVIC Hainan Special Glass Technology Co., Ltd., Chengmai 571924 |
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| Abstract: | FTO (SnO2∶F)films were prepared via atmospheric pressure chemical vapor deposition on the bo-rosilicate glass substrate with a new precursor dimethyltin dichloride (DMTC).The influences of contents of DMTC, TFA and water on the structure and photoelectric properties of films were studied respectively.Results showed that when the molar ratio of F/Sn,H2 O/Sn was 1∶1 and 3∶2 respectively,the as-prepared film had a high visible light transmittance of 84.17% and a sheet resistance of 9.2 Ω/□ with a high crystallinity of polycrystalline SnO2 thin films.Comparative analyses of thin films prepared from different precursors,i.e.dimethyltin dichloride and monobu-tyltin trichloride (MBTC),indicated that both of the produced films had tetragonal rutile structure and similar per-formance,but film deposited using DMTC precursor was more uniform. |
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| Keywords: | dimethyltin dichloride chemical vapor deposition F-doped SnO2 thin film |
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