Optimum IV-group ion concentrations in ZnGa2O4−xMx (M=S, Se, Te) phosphors for enhancement of luminescence |
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Authors: | H.I KangJ.S Kim H.L Park G.C KimT.W Kim Y.H HwangS.I Mho C Lee |
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Affiliation: | a Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, South Korea b School of Liberal Arts, Korea University of Technology and Education, Cheonan 330-708, South Korea c Department of Physics, Kwangwoon University, Seoul 139-701, South Korea d RCDAMP, Pusan National University, Pusan 609-735, South Korea e Department of Chemistry, Ajou University, Suwon 442-749, South Korea f Department of Physics, Sunchon National University, Sunchon 540-742, South Korea |
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Abstract: | The ZnGa2O4−xMx (M=S, Se, and Te ) samples with varying S, Se, and Te concentrations are synthesized through solid-state reactions. The X-ray diffraction patterns of ZnGa2O4−xMx (M=S, Se, and Te) show that the positions of the (4 0 0) diffraction peak gradually shift to lower angles due to the doping of VI-group ions (S, Se, and Te) with larger ionic radius than oxygen. For ZnGa2O4−xSx samples, the solubility limit is found to be about x=0.30. The cathodoluminescence measurements on ZnGa2O4−xMx samples show that the optimized S, Se, and Te concentrations with the highest cathodoluminescence intensities are 0.10, 0.05, and 0.03, respectively. The luminous intensity of ZnGa2O3.95Se0.05 is four times higher than that of ZnGa2O4. Thus, ZnGa2O3.95Se0.05 can be a promising candidate phosphor for FED applications. |
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Keywords: | A. Oxides C. X-ray diffraction D. Luminescence D. Optical properties |
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