High‐Performance Near‐IR Photodetector Using Low‐Bandgap MA0.5FA0.5Pb0.5Sn0.5I3 Perovskite |
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| Authors: | Xiaobao Xu Chu‐Chen Chueh Peifeng Jing Zhibin Yang Xueliang Shi Ting Zhao Lih Y Lin Alex K‐Y Jen |
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| Affiliation: | 1. Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA;2. Department of Chemical EngineeringNational Taiwan University;3. Department of Electrical Engineering, University of Washington, Seattle, WA, USA;4. Department of Biology and Chemistry, City University of Hong Kong, Kowloon, Hong Kong |
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| Abstract: | Photodetectors with ultrafast response are explored using inorganic/organic hybrid perovskites. High responsivity and fast optoelectronic response are achieved due to the exceptional semiconducting properties of perovskite materials. However, most of the perovskite‐based photodetectors exploited to date are centered on Pb‐based perovskites, which only afford spectral response across the visible spectrum. This study demonstrates a high‐performance near‐IR (NIR) photodetector using a stable low‐bandgap Sn‐containing perovskite, (CH3NH3)0.5(NH2CHNH2)0.5Pb0.5Sn0.5I3 (MA0.5FA0.5Pb0.5Sn0.5I3), which is processed with an antioxidant additive, ascorbic acid (AA). The addition of AA effectively strengthens the stability of Sn‐containing perovskite against oxygen, thereby significantly inhibiting the leakage current. Consequently, the derived photodetector shows high responsivity with a detectivity of over 1012 Jones ranging from 800 to 970 nm. Such low‐cost, solution processable NIR photodetectors with high performance show promising potential for future optoelectronic applications. |
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| Keywords: | low bandgap near‐IR perovskites photodetectors |
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