|
|||||
|
|
Characterization of indium tin oxide film and practical ITO film by electron microscopy |
|
| Authors: | T. Nakao T. Nakada Y. Nakayama K. Miyatani Y. Kimura Y. Saito C. Kaito |
| Affiliation: | a Department of Physics, Ritsumeikan University, Noji, Kusatu, Shiga 525-8577, Japan b Department of Electronics and Information Science, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606-8585, Japan |
| Abstract: | In order to clarify the structure of indium oxide film containing tin and tin oxides, various In2O3 based films prepared by vacuum evaporation were studied using high-resolution electron microscope (HREM). Indium tin oxide (ITO) film was composed of In2O3 and SnO. SnO crystal also contained (110) or (101) crystallographic shear (CS) structures that indicate excess amounts of tin. The CS structure was also found in a commercial ITO film having the resistivity of 2×10−4 Ω cm. |
| Keywords: | Electron microscopy Indium oxide Solar cells Transmission electron microscopy |
| 本文献已被 ScienceDirect 等数据库收录！ | |