DC characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT) |
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| Authors: | Chun-Yuan Chen Shiou-Ying Cheng Wen-Hui Chiou Hung-Ming Chuang Rong-Chau Liu Chih-Hung Yen Jing-Yuh Chen Chin-Chuan Cheng Wen-Chau Liu |
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| Affiliation: | Dept. of Electr. Eng., Nat. Cheng-Kung Univ., Taiwan, Taiwan; |
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| Abstract: | The dc performances of a novel InP-InGaAs tunneling emitter bipolar transistor (TEBT) are studied and demonstrated. The studied device can be operated under an extremely wide collector current regime larger than 11 decades in magnitude (10/sup -12/ to 10/sup -1/ A). A current gain of 3 is obtained even operated at an ultralow collector current of 3.9/spl times/10/sup -12/ A (1.56 /spl times/10/sup -7/ A/cm/sup 2/). The common-emitter and common-base breakdown voltages of the studied device are higher than 2 and 5 V, respectively. Furthermore, a very low collector-emitter offset voltage of 40 mV is found. The temperature-dependent dc characteristics of the TEBT are measured and studied. Consequentially, based on experimental results, the studied device provides the promise for low-power electronics applications. |
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