| Effect of growth-interrupted method on quality of AlGaAs/GaAs multiple quantum wells prepared by MBE |
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| 作者姓名： | 国风云 王怀芒 赵连城 |
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| 作者单位： | Department of Materials Physics and Chemistry, Harbin Institute of Technology, Harbin 150001, China |
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| 基金项目： | Acknowledgements The authors gratefully acknowledge helpful discussions with professor FEI Wei-dong of Harbin Institute of Technology. |
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| 摘 要： | AlGaAs/GaAs multi-quantum well （MQW） was prepared by molecular beam epitaxy（MBE） with growth-interrupted heterointerface （GIH） method and continuous growth （CG） method, respectively. The microstructures Of the MQWs were characterized by double-crystal X-ray rocking curve （DCRC） and atomic force microscopy （AFM）, and the photoluminescence （PL） properties of the MQWs were also studied. The MQWs grown with GIH method show that higher order satellite peaks of Pendelloesung fiinges are observed in DCRC, the roughness of surface is much reduced in AFM, and the full width at half maximum （FWHM） of exciton line is much narrower in PL. The results indicate that the GIH method reduces the monolayer growth step density at the heterointerface due to the migration of surface atomsfor a few minutes grower interruption, and substantially improves the quality of AlGaAs/GaAs MQWs.
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| 关 键 词： | AlGaAs/GaAs多量子阱 MBE 生长中断法 多晶X射线摇摆曲线 原子力显微镜 |
| 收稿时间： | 2006-04-10 |
| 修稿时间： | 2006-04-25 |
Effect of growth-interrupted method on quality of AlGaAs/GaAs multiple quantum wells prepared by MBE |
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| GUO Feng-yun, WANG Huai-mang, ZHAO Lian-cheng.Effect of growth-interrupted method on quality of AlGaAs/GaAs multiple quantum wells prepared by MBE[J].Transactions of Nonferrous Metals Society of China,2006,16(B01):183-186. |
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| Authors: | GUO Feng-yun WANG Huai-mang ZHAO Lian-cheng |
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| Abstract: | |
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| Keywords: | AlGaAs/GaAs multi-quantum wells growth interruption double-crystal X-ray rocking curve atomic force microscope photoluminescence |
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