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Magnetotransport characterization of surface-treated InP/InGaAs heterojunction bipolar transistors |
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| Authors: | Richard K. Oxland Andrew R. Long Faiz Rahman |
| Affiliation: | aDepartment of Electronics and Electrical Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom;bDepartment of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ, United Kingdom |
| Abstract: | The results of surface modification induced effects on InP/InGaAs single heterojunction bipolar transistors, as revealed by magnetotransport experiments, are described here. The surface treatments included both sulphur-based surface passivation and ion bombardment-induced surface damage. The former is known to improve device characteristics and the latter to degrade device operation. In this work the aim was to assess these techniques for tailoring device performance for surface sensing applications. Device characteristics were found to be sensitive to surface preparation prior to measurements. Measurements revealed that surface treatments that improve device performance also reduce sensitivity to external magnetic fields while treatments that degrade performance make devices more sensitive to externally applied magnetic fields. |
| Keywords: | Heterojunction bipolar transistor Magnetotransport measurements Transistor characteristics Surface passivation Device encapsulation Semiconductor sensor |
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