The electrical characteristics of polysilicon oxide grown in pure N2O |
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| Authors: | Chao Sung Lai Tan Fu Lei Chung Len Lee |
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| Affiliation: | Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu; |
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| Abstract: | N2O was used to grow silicon polyoxide. It was found that the N2O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased. This is opposite to that of conventional O2-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown |
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