| 双面肖特基势垒型GaAs粒子探测器的电特性研究 |
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| 引用本文： | 邵传芬,史常忻.双面肖特基势垒型GaAs粒子探测器的电特性研究[J].固体电子学研究与进展,1996,16(1):24-27. |
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| 作者姓名： | 邵传芬 史常忻 |
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| 作者单位： | 上海交通大学微电子技术研究所 |
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| 摘 要： | 研究了有源面积为９ｍｍ２的双面肖特基势垒ＧａＡｓ粒子探测器的电特性。器件工艺简单，结构新颖，反向耐压高于３００Ｖ，反向漏电流密度低（９１ｎＡ／ｍｍ２），该器件能经受能量为１．５ＭｅＶ、剂量为１０００ｋＧｙ的电子照射，电特性正常，是一种抗辐照的粒子探测器。
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| 关 键 词： | 砷化镓，探测器，抗辐照 |
Investigation on Electrical Characteristics of Double Schottky Barrier GaAs Particle Detectors |
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| Shao Chuanfen,Shi Changxin,Xu Xiuqing.Investigation on Electrical Characteristics of Double Schottky Barrier GaAs Particle Detectors[J].Research & Progress of Solid State Electronics,1996,16(1):24-27. |
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| Authors: | Shao Chuanfen Shi Changxin Xu Xiuqing |
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| Abstract: | The electrical characteristics of double Schottky barrier GaAs particle detectors with 9mm2 active areas have been investigated in this paper.The devices,which are new in structure and easy to process,show breakdown voltages of higher than 300 V and leakage current density of lower than 91 nA/mm2.The electrical characteristics remain normal after 1. 5 MeV electron irradiation of 1000 kGy.It is a promising radiation-resistant particle detector. |
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| Keywords: | GaAs Detector Radiation-resistance |
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