X波段单级氮化镓固态放大器

利用自主研制的SiC衬底的栅宽为2.5 mm的AlGaN/GaN HEMT器件,设计完成了单级X波段氮化镓固态放大器模块.模块由AlGaN/GaN HEMT器件、偏置电路和微带匹配电路构成.采用金属腔体和测试夹具,保证在连续波下具有良好的接地和散热性能.利用双偏置电路馈电,并且采用独特的电容电阻网络和栅极串联电阻消除了低频和射频振荡.利用微带短截线完成了器件的输入输出匹配.在8GHZ频率及连续波情况下(直流偏置电压为V_(ds)=27V,U_(gs)=-4.0V),放大器线性增益为5.6 dB,最大效率为30.5%,输出功率最大可达40.25 dBm(10.5W),此时增益压缩为2 dB.在带宽为500 MHz内,输出功率变化为1 dB.

X-band single stage GaN solid-state power amplifier

Based on the self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on the SiC substrate, the X-band GaN solid-state power amplifier module is fabricated. The module consists of the AlGaN/GaN HEMT, DC-bias circuit and microstrip line. The chamber structure made of metal and the test fixture are designed for grounding and thermal transmission under the CW operating condition. Two section bias circuits for the AlGaN/GaN HEMT are presented. The special R-C networks and gate resistance are used for cancellation of self-oscillation at both the low frequency and radio frequency. The microstrip stubs are used for input matching and output matching. Under the V_ds= 27V, V_gs= -4.0V CW operating condition at 8GHz, the amplifier module exhibits a line gain of 5.6dB with a power-added efficiency of 30.5％, the output power of 40.25dBm (10.5W), and the power gain compression of 2dB. Between 8GHz and 8.5GHz, the variation of output power is 1dB.