| 反应磁控溅射的进展 |
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| 引用本文： | 茅昕辉,陈国平,蔡炳初. 反应磁控溅射的进展[J]. 真空, 2001, 0(4): 1-7 |
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| 作者姓名： | 茅昕辉 陈国平 蔡炳初 |
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| 作者单位： | 1. 上海交通大学微纳米科学技术研究院,
2. 东南大学薄膜研究所, |
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| 摘 要： | 反应磁控溅射被广泛应用于制备化合物薄膜。本文分析了反应磁控溅射中迟滞效应、靶中毒与打火现象，讨论了提高反应磁控溅射沉积速率、抑制靶面打火与保持溅射过程稳定性的途径。在阐述了近年来反应磁控溅射量新研发进展的基础上，介绍了中频溅射在减反膜、高反膜和低辐射率膜工业化生产中的应用。
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| 关 键 词： | 反应磁控溅射 中频溅射 脉冲溅射 化合物薄膜 迟滞效应 制备 打火 抑制途径 靶中毒 |
| 文章编号： | 1002-0322(2001)04-0001-07 |
| 修稿时间： | 2001-04-15 |
Advance in reactive magnetron sputtering |
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| MAO Xin hui ,CHEN Guo ping ,CAI Bing chu. Advance in reactive magnetron sputtering[J]. Vacuum(China), 2001, 0(4): 1-7 |
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| Authors: | MAO Xin hui CHEN Guo ping CAI Bing chu |
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| Affiliation: | MAO Xin hui 1,CHEN Guo ping 2,CAI Bing chu 1 |
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| Abstract: | Reactive magnetron sputtering was used to prepare many kinds of compound films extensively. In this paper, hysteresis phenomena of reactive sputtering, and poisoning and arcing of targets were analyzed. The ways of increasing the reactive sputtering rate, suppressing the arc on target surface, and keeping the stability of sputtering process were discussed. Basing on presenting the state of the art of the reactive magnetron sputtering, the industrial applications of mid frequency sputtering in the deposition of antireflecting films, high reflectivity films and low emissivity films were introduced. |
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| Keywords: | reactive magnetron sputtering mid frequency sputtering pulsed sputtering compound films |
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