掺杂一维光子晶体的杂质态

阐述了无缺陷光子晶体与掺杂光子晶体的结构,用光学特征矩阵方法,通过数值模拟计算具体讨论了一维光子晶体的一个实例。计算结果表明,掺杂光子晶体的禁带出现了极窄的、高透射率的尖峰,即光子杂质态,类似于半导体材料中的杂质能级。杂质层的引入增宽了原来光子禁带的宽度,杂质态的特征与杂质层的光学厚度、折射率及在晶体中的位置等因素有关。

Impurity State in Doped One-dimensional Photonic Crystals

The structure of photonic crystal with defect and doped photonic crystal were explained. A doped one-dimensional photonic crystal was investigated as an example by numeral simulated calculation with the method of characteristic matrix. The results indicate that there is a narrow high-transmittance peak in photonic forbidden band of doped one-dimensional photonic crystals. This is a photonic impurity state, similar to the impurity level in semiconductor. The introduction of impurity layer increased the width of original photonic forbidden band. The characters of impurity state related to the optical thickness, refraction index and location of impurity layer.