Influence of Grain Growth on Dielectric Properties of Nb-Doped BaTiO3 |
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| Authors: | MANFRED KAHN |
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| Affiliation: | Sprague Electric Company, North Adams, Massachusetts 01247 and Department of Materials Science, The Pennsylvania State University, University Park, Pennsylvania 16802 |
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| Abstract: | Effects of grain size and grain growth in Nb-doped BaTiO3 on temperature and frequency dependencies of the dielectric constant were investigated. When 0.65 μm powder is sintered to an average grain size of 1 μm, two dielectric constant peaks indicate the presence of Nb-free BaTiO3 and of Nb-containing material. Single peaks are observed above room temperature after additional grain growth or when 0.07 μm powder is sintered to an average grain size of 1 μm. The Curie point of pure BaTiO3 with 1 μm grains is 4 to 6°C lower than that of material with grains >10 μm. Thermodynamically, this behavior is accounted for by a phase inversion stress ∼ the room-temperature stress. |
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