| 新型纳米尺寸MOSFET器件的模拟和设计 |
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| 引用本文： | 胡伟达,陈效双,全知觉.新型纳米尺寸MOSFET器件的模拟和设计[J].红外,2007,28(2):7-11. |
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| 作者姓名： | 胡伟达 陈效双 全知觉 |
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| 作者单位： | 中国科学院上海技术物理研究所红外物理国家重点实验室,上海,200083 |
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| 摘 要： | 在半导体器件的研制过程中,用计算机数值模拟取代测量方法来优化设计器件的性能参数,则器件的调试周期将显著缩短,费用将大幅度降低。本文简述了新型纳米尺寸MOSFET器件模拟的主要物理模型和数值方法,阐述MOSFET相关器件模拟的国内外研究动态,判断其发展趋势和研究方向。
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| 关 键 词： | 器件模拟 数值方法 MOSFET FinFET 短沟道效应 |
| 文章编号： | 1672-8785（2007）02-0007-05 |
| 修稿时间： | 2006-09-10 |
Simulation and Design of New Nano-scale MOSFETs |
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| HU Wei-d,CHEN Xiao-shuang,QUAN Zhi-jue.Simulation and Design of New Nano-scale MOSFETs[J].Infrared,2007,28(2):7-11. |
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| Authors: | HU Wei-d CHEN Xiao-shuang QUAN Zhi-jue |
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| Affiliation: | National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | During the design and fabrication of semiconductor devices, if the numerical simulation is used to optimize the performance parameters of the designed devices, the test period and fabrication cost of the devices will be reduced remarkably. In this paper, the models and methodologies for simulating new nano-scale MOSFETs are described in brief. The current status of the research on the simulation of next generation MOSFETs at home and abroad is presented in detail and its trend is given. |
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| Keywords: | device simulation numerical methodology MOSFET FinFET short channel effects |
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