Influence of Ga vs As prelayers on GaAs/Ge growth morphology |
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| Authors: | Q. Xu J. W. P. Hsu E. A. Fitzgerald J. M. Kuo Y. H. Xie P. J. Silverman |
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| Affiliation: | (1) Department of Physics, University of Virginia, 22901 Charlottesville, VA;(2) Department of Materials Science and Engineering, Massachusetts Institute of Technology, 02139 Cambridge, MA;(3) AT&T Bell Labs, 07974 Murray Hill, NJ |
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| Abstract: | The surface morphology of GaAs films grown on Ge substrates is studied by scanning force microscopy. We find a dramatic difference arising from Ga as opposed to As prelayers in the formation of anti-phase boundaries (APBs), surface features near threading dislocations, and surface roughness, for films as thick as 1 μm. Ga prelayer samples are smooth; thin films display some APBs with predominantly one growth domain while the 1 μm thick film displays the morphology of a homoepitaxial GaAs film. In contrast, As prelayer samples are rough with complicated APB structures, which can be attributed to the increase in single steps during As2 deposition. |
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| Keywords: | GaAs/Ge molecular beam epitaxy (MBE) prelayers surface morphology |
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