| INFLUENCE OF LASER RECRYSTALLIZATION AND HYDROGEN ANNEALING ON ELECTRICAL CHARACTERISTICS OF POLYSILICON |
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| 作者姓名： | 方芳 林成鲁 沈宗雍 邹世昌 |
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| 作者单位： | Shanghai Institute of Metallurgy Academia Sinica，Shanghai Institute of Metallurgy，Academia Sinica，Shanghai Institute of Metallurgy，Academia Sinica，Shanghai Institute of Metallurgy，Academia Sinica |
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| 摘 要： | Asenic ions are implanted with doses of 5×10~(11)—5×10~(15)/cm~2 into LPCVD polysilicon films onSiO_2 isolating substrate.The polysilicon films have been recrystallized with CW Ar~+ laser beforeimplantation.Electrical measurements show that the resistivity is lowered and the mobility is increasedsignificantly at low doping concentration(～10~(17)As~+/cm~3).Plasma
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