Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As |
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Authors: | Ng JS Tan CH David JPR Hill G Rees GJ |
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Affiliation: | Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK; |
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Abstract: | Electron and hole ionization coefficients in In/sub 0.53/Ga/sub 0.47/As are deduced from mixed carrier avalanche photomultiplication measurements on a series of p-i-n diode layers, eliminating other effects that can lead to an increase in photocurrent with reverse bias. Low field ionization is observed for electrons but not for holes, resulting in a larger ratio of ionization coefficients, even at moderately high electric fields than previously reported. The measured ionization coefficients are marginally lower than those of GaAs for fields above 250 kVcm/sup -1/, supporting reports of slightly higher avalanche breakdown voltages in In/sub 0.53/Ga/sub 0.47/As than in GaAs p-i-n diodes. |
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